? 2004 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 300 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 300 v v gsm 20 v i d25 t c = 25 c88a i d(rms) external lead current limit 75 a i dm t c = 25 c, pulse width limited by t jm 220 a i ar t c = 25 c60a e ar t c = 25 c60mj e as t c = 25 c 2.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 4 ? p d t c = 25 c 600 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c m d mounting torque 1 .13/10 nm/lb.in. weight to-247 6 g to-264 10 g to-268 5 g g = gate d = drain s = source tab = drain ds99129a(01/04) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 300 v v gs(th) v ds = v gs , i d = 250 a 2.5 5.0 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c 250 a r ds(on) v gs = 10 v, i d = 0.5 i d25 40 m ? pulse test, t 300 s, duty cycle d 2 % polarht tm power mosfet ixth 88n30p v dss = 300 v ixtt 88n30p i d25 = 88 a r ds(on) = 40 m ? ? ? ? ? n-channel enhancement mode features z international standard packages z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density polarht tm dmos transistors utilize proprietary designs and process. us patent is pending. to-268 (ixtt) g s to-247 (ixth) d (tab) d (tab) preliminary data sheet
ixys reserves the right to change limits, test conditions, and dimensions. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 40 50 s c iss 6300 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 950 pf c rss 190 pf t d(on) 25 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 60 a 24 ns t d(off) r g = 3.3 ? (external) 96 ns t f 25 ns q g(on) 180 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 44 nc q gd 90 nc r thjc 0.21 k/w r thck (to-247) 0.21 k/w (to-264) 0.15 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 88 a i sm repetitive 220 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25 a 250 ns -di/dt = 100 a/ s q rm v r = 100 v 3.3 c ixth 88n30p ixtt 88n30p to-268 outline ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 to-247 ad outline 1 2 3 dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc
? 2004 ixys all rights reserved fig. 2. extended output characteristics @ 25 o c 0 20 40 60 80 100 120 140 160 180 200 0 2 4 6 8 101214161820 v d s - volts i d - amperes v gs = 10v 9v 7v 6v 8v 5v fig. 3. output characteristics @ 125 o c 0 10 20 30 40 50 60 70 80 90 0123456789 v d s - volts i d - amperes v gs = 10v 9v 8v 5v 6v 7v fig. 1. output characteristics @ 25 o c 0 10 20 30 40 50 60 70 80 90 00.511.5 22.533.54 v d s - volts i d - amperes v gs = 10v 9v 8v 7v 6v 5v fig. 4. r ds(on ) norm alized to 0.5 i d25 value vs. junction tem perature 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( on) - normalize d i d = 88a i d = 44a v gs = 10v fig. 6. drain current vs. case temperature 0 10 20 30 40 50 60 70 80 90 100 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) norm alized to 0.5 i d25 value vs. i d 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 3.2 3.4 0 20 40 60 80 100 120 140 160 180 200 i d - amperes r d s (on) - normalized t j = 125oc t j = 25oc v gs = 10v ixth 88n30p ixtt 88n30p
ixys reserves the right to change limits, test conditions, and dimensions. fig. 11. capacitance 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 180 q g - nanocoulombs v g s - volts v ds = 150v i d = 44a i g = 10ma fig. 7. input admittance 0 20 40 60 80 100 120 140 160 44.5 55.5 66.5 77.5 8 v g s - volts i d - amperes t j = 125oc 25oc -40oc fig. 8. transconductance 0 10 20 30 40 50 60 70 80 90 100 0 20 40 60 80 100 120 140 160 180 i d - amperes g f s - siemens t j = -40oc 25oc 125oc fig. 9. source current vs. source-to-drain voltage 0 40 80 120 160 200 240 280 0.4 0.6 0.8 1 1.2 1.4 1.6 v s d - volts i s - amperes t j = 125oc t j = 25oc fig. 12. forw ard-bias safe operating area 1 10 100 1000 10 100 1000 v d s - volts i d - amperes 100s 1ms dc t j = 150oc t c = 25oc r ds(on) limit 10ms 25s ixth 88n30p ixtt 88n30p
? 2004 ixys all rights reserved ixth 88n30p ixtt 88n30p fig. 13. m axim um trans ie nt the rm al re s is tance 0.01 0.10 1.00 1 10 100 1000 pu ls e w idth - millis ec ond s r (th) j c - oc / w
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